Threshold Voltage in Short-Channel MOS Devices

IEEE Transactions on Electron Devices

Volumn 32, Issue 5, 1985, Pages 932-940

  Viswanathan, C R ^a   Burkey, Bruce C ^b   Lubberts, Gerrit ^b   Tredwell, Timothy J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; TRANSISTORS - ANALYSIS;

ELECTRIC FIELD MODEL; SHORT-CHANNEL MOS TRANSISTORS; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022061315     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22050     Document Type: Article

References (6)

1. L. D. Yao, Solid-State Electron., vol. 17, p. 1059, 1974.
2. L. A. Akers and J. J. Sanchez, Solid-State Electron., vol. 25, p. 621, 1982.
3. G. W. Taylor, IEEE Trans. Electron Devices, vol. ED-25, p. 337, 1978.
4. Solid-State Electron., vol. 22, p. 701, 1979.
5. J. R. Rice, Mathematical Software III. New York: Academic, 1977, p. 319.
6. B. C. Burkey, G. Lubberts, E. A. Trabka, and T. J. Tredwell, IEEE Trans. Electron Devices, vol. ED-31, p. 423, Apr. 1984.