Integrated Injection Logic for VLSI

IEEE Transactions on Electron Devices

Volumn ED-27, Issue 7, 1980, Pages 1301-1303

  Rofail, S S ^a   Elmasry, M I ^b   Heasell, E L ^b  

^a NORWICH UNIVERSITY   (United States)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CIRCUITS;

INTEGRATED CIRCUITS;

EID: 0019039397     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20026     Document Type: Article

References (8)

1. G. Persky, “Thermionic saturation of diffusion currents in transistors,” Solid-State Electron., vol. 15, pp. 1345–1351, 1972.
2. P. Rohr and F. A. Lindholm, “Questionability of drift-diffusion transport in the analysis of small semiconductor devices,” Solid-State Electron., vol. 17, pp. 729–734, 1974.
3. S. S. Rofail, M. I. Elmasry, and E. L. Heasell, “Functional modeling of integrated injection logic-dc analysis,” IEEE Trans. Electron Devices, vol. ED-24, no. 3, pp. 234–241, Mar. 1977.
4. S.A. Evans, “Scaling I2L for VLSI,” IEEE J. Solid-State Circuits, vol. SC 14, pp. 318–327, Apr. 1979.
5. F. M. Klaasen, “Design and performance of micro-size devices,” Solid-State Electron., vol. 21, pp. 565–571, 1978.
6. G. Buccarani et al., “Current transport in narrow base transistors,” Solid-State Electron., vol. 20, pp. 5–10, 1977.
7. M. H. Elsaid, D. J. Roulston, and L, A. K. Watt, “Vertical current components of integrated injection logic,” IEEE Trans. Electron Devices, vol. ED-24, pp. 643–647, June 1977.
8. J. W. Slotboom and H. C. de Graaf, “Measurements of band-gap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, p. 857, 1976.