High-Gain Lateral Bipolar Action in a Mosfet Structure

IEEE Transactions on Electron Devices

Volumn 38, Issue 11, 1991, Pages 2487-2496

  Verdonckt Vandebroek, Sophie ^a   Wong, S Simon ^b   Woo, Jason C S ^c   Ko, Ping K ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; TRANSISTORS, BIPOLAR;

CMOS TECHNOLOGY; HIGH GAIN LATERAL BIPOLAR ACTION; LIQUID NITROGEN TEMPERATURE; MOSFET STRUCTURES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026253926     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.97413     Document Type: Article

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