An Engineering Model for Short-Channel MOS Devices

IEEE Journal of Solid-State Circuits

Volumn 23, Issue 4, 1988, Pages 950-958

  Toh, Kai Yap ^a   Ko, Ping Keung ^a   Meyer, Robert G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS -- CHARGE CARRIERS;

OUTPUT CONDUCTANCE; OUTPUT CONDUCTANCE SIMPLIFIED EXPRESSION; PIECEWISE CARRIER DRIFT VELOCITY MODEL; SHORT-CHANNEL MOS DEVICES; SMALL SIGNAL TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024055902     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.346     Document Type: Article

References (9)

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2. B. Hoeneisen and C. A. Mead, “Current-voltage characteristics of small size MOS transistors,” IEEE Trans. Electron Devices, vol. ED-19, pp. 382–383, Mar. 1972.
3. M-S. Liang, J. Y. Choi, P.-K. Ko, and C. Hu, “Inversion-layer capacitance and mobility of very thin gate-oxide MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, no. 3, pp. 409–412, Mar. 1986.
4. P.-K. Ko, “Hot electron effects in MOSFET's,” Ph.D. Dissertation, Univ. of Calif., Berkeley, 1982.
5. R. R. Troutman, “VLSI limitations from drain-induced barrier lowering,” IEEE Trans. Electron Devices, vol. ED-26, no. 4, pp. 461–468, Apr. 1979.
6. B. J. Sheu, D. L. Scharfetter, P.-K. Ko, and M. C. Jeng, “BSIM: Berkeley short-channel IGFET model for MOS transistors,” IEEE J. Solid-state Circuits, vol. SC-22, pp. 558–566, Aug. 1987.
7. A. G. Sabins and T. J. Chemens, “Characterization of the electron mobility in the inverted ‘100’ Si surface,” in IEDM Tech. Dig., 1979, p. 18.
8. T. Y. Chan, P.-K. Ko, and C. Hu, “A simple method to characterize substrate current in MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, no. 12, pp. 505–507, Dec. 1984.
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 47.