Questionability of drift-diffusion transport in the analysis of small semiconductor devices

Solid State Electronics

Volumn 17, Issue 7, 1974, Pages 729-734

  Rohr, Peter ^a   Lindholm, Fredrik A ^a   Allen, Kenneth R ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0016079923     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90097-5     Document Type: Article

References (27)

1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
2. Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
3. The spatial variation of the quasi-Fermi potentials in p-n junctions
4. Simple General Analysis of Amplifier Devices with Emritter, Control, and Collector Functions
5. High current-density beta diminution
6. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
7. A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
8. High current regimes in transistor collector regions
9. Impurity concentration dependent density of states and resulting fermi level for silicon
10. Transport equations in heavy doped silicon