Quasi-Saturation Capacitance Behavior of a DMOS Device

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1117-1123

  Liu, Chung Min ^a   Kuo, James B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; SIMULATION;

DMOS DEVICES; DOUBLE-DIFFUSED METAL-OXIDE SEMICONDUCTOR DEVICES; QUASI-SATURATION CAPACITANCE;

MOS DEVICES;

EID: 0031176929     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595939     Document Type: Article

References (16)

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