77 K Versus 300 K Operation: The Quasi-Saturation Behavior of a DMOS Device and Its Fully Analytical Model

IEEE Transactions on Electron Devices

Volumn 40, Issue 9, 1993, Pages 1636-1644

  Liu, Chung Min ^a   Lou, Kou Hou ^a   Kuo, James B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTOR DEVICE MODELS;

DMOS DEVICES; DRAIN CURRENT; FULLY ANALYTICAL MODEL; LOW-TEMPERATURE 'PISCES'; QUASI-SATURATION BEHAVIOR;

MOS DEVICES;

EID: 0027656349     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.231569     Document Type: Article

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