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Volumn 15, Issue 4, 1980, Pages 636-643

Transient Analysis of MOS Transistors

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EID: 63349106220     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1980.1051448     Document Type: Article
Times cited : (107)

References (17)
  • 1
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    • Meyer, J.E.1
  • 2
    • 0037545990 scopus 로고
    • A MOS model for computer-aided design
    • F.M. Klassen, “A MOS model for computer-aided design,” Phillips Res. Rep., vol. 3, pp. 71–80, 1976.
    • (1976) Phillips Res. Rep. , vol.3 , pp. 71-80
    • Klassen, F.M.1
  • 3
    • 0010436440 scopus 로고
    • Large-signal transit-time effects in the MOS transistor
    • J.R. Burns, “Large-signal transit-time effects in the MOS transistor,”./^ Rev., no. 15, 1969.
    • (1969) Rev. , Issue.15
    • Burns, J.R.1
  • 5
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    • Calculation of the turnon behavior of MOST
    • M.E. Zahn, “Calculation of the turnon behavior of MOST,” SolidstateElectron., vol. 17, p. 843, 1974.
    • (1974) SolidstateElectron. , vol.17 , pp. 843
    • Zahn, M.E.1
  • 6
    • 0348153069 scopus 로고
    • Small-signal high frequency theory of fieldeffect transistors
    • Apr.
    • A. Van der Ziel, “Small-signal high frequency theory of fieldeffect transistors,” IEEE Trans. Electron Devices, vol. ED-11, pp. 128–135, Apr. 1964.
    • (1964) IEEE Trans. Electron Devices , vol.11 ED , pp. 128-135
    • Van der Ziel, A.1
  • 7
    • 50549206430 scopus 로고
    • The equivalent circuit of an arbitrarily doped fieldeffect transistor
    • I. Richer, “The equivalent circuit of an arbitrarily doped fieldeffect transistor,” Solidstate Electron., vol. 8, pp. 381–393, 1965.
    • (1965) Solidstate Electron. , vol.8 , pp. 381-393
    • Richer, I.1
  • 8
    • 84939022435 scopus 로고    scopus 로고
    • A simplified Two-dimensional numerical analysis of MOS device-DC case
    • submitted to
    • S.Y. Oh and R.W. Dutton, “A simplified Two-dimensional numerical analysis of MOS device-DC case,” submitted to IEEE Trans. Electron Devices.
    • IEEE Trans. Electron Devices.
    • Oh, S.Y.1    Dutton, R.W.2
  • 9
    • 0343555215 scopus 로고
    • Two-dimensional static and transient simulation of mobile carrier transport in a semiconductor
    • (Dublin, Ireland), June
    • P.E. Cottrell and E. Buturla, “Two-dimensional static and transient simulation of mobile carrier transport in a semiconductor,” in Proc. NASECODEI (Dublin, Ireland), June 1979.
    • (1979) Proc. NASECODEI
    • Cottrell, P.E.1    Buturla, E.2
  • 10
    • 0015626349 scopus 로고
    • A Two-dimensional mathematical method of IGFET transistors
    • M.S. Mock, “A Two-dimensional mathematical method of IGFET transistors,” Solidstate Electron., vol. 16, pp. 601–609, 1973.
    • (1973) Solidstate Electron. , vol.16 , pp. 601-609
    • Mock, M.S.1
  • 11
    • 0015346146 scopus 로고
    • An accurate Two-dimensional numerical analysis of the MOS transistor
    • D. Vandorpe and J. Borel, “An accurate Two-dimensional numerical analysis of the MOS transistor,” Solidstate Electron., vol. 15, pp. 547–557, 1972.
    • (1972) Solidstate Electron. , vol.15 , pp. 547-557
    • Vandorpe, D.1    Borel, J.2
  • 12
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    • Steady state analysis of field effect transistors via the finite element method
    • Dec.
    • P.E. Cottrell and E.M. Buturla, “Steady state analysis of field effect transistors via the finite element method,” in IEDM Tech. Dig., pp. 51–54, Dec. 1975.
    • (1975) IEDM Tech. Dig. , pp. 51-54
    • Cottrell, P.E.1    Buturla, E.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.