An Analytical Quasi-Saturation Model for Vertical DMOS Power Transistors

IEEE Transactions on Electron Devices

Volumn 40, Issue 3, 1993, Pages 676-679

  Lou, K H ^a   Liu, C M ^a   Kuo, J B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012751621     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199343     Document Type: Article

References (11)

1. B. J. Baliga, Modern Power Devices. New York: Wiley, 1987.
2. D. A. Grant and J. Gowar, Power MOSFETs: Theory and Applications. New York: Wiley, 1989.
3. M. N. Darwish, “Study of quasi-saturation in VDMOS transistors,” IEEE Trans. Electron Devices, vol. ED-33, no. 11, pp. 1710–1716, Nov. 1986.
4. Y. S. Kim and J. G. Fossum, “Physical DMOST modeling for high-voltage IC CAD,” IEEE Trans. Electron Devices, vol. 37, no. 3, pp. 797–803, Mar. 1990.
5. K. H. Lou, C. M. Liu, and J. B. Kuo, “Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor,” accepted for publication in Solid-State Electron.
6. K. Shenai, “A circuit simulation model for high-frequency power MOSFET’s,” IEEE Trans. Power Electron., vol. 6, no. 3, pp. 539–547, July 1991.
7. K. Shenai, “Optimally scaled low-voltage vertical power MOSFET’s for high-frequency power conversion,” IEEE Trans. Electron Devices, vol. 37, no. 4, pp. 1141–1153, Apr. 1990.
8. D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE, vol. 55, pp. 2192–2193, 1967.
9. F. M. Klaassen, “A MOS model for computer-aided design,” Philips Res. Rep., vol. 31, pp. 71–83, 1976.
10. Y. P. Tsividis, Operation and Modeling of The MOS Transistor. New York: McGraw-Hill, 1988.
11. M. R. Pinto, C. S. Rafferty, and R. W. Dutton, “PISCES 2: Poisson and continuity equation solver,” Tech. Rep., Stanford Univ., Sept. 1984.