A Steady-State VDMOS Transistor Model

IEEE Transactions on Electron Devices

Volumn 39, Issue 3, 1992, Pages 712-719

  Paredes, Jacinto ^a   Hidalgo, Salvador ^a   Berta, Francisco ^a   Fernández, Juan ^a   Rebollo, Jose ^a   Millán, Jose ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

INTERDIGITATED TRANSISTORS; MAJORITY CARRIERS; VDMOS TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026835427     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123499     Document Type: Article

References (12)

1. S. C. Sun and J. D. Plummer, “Modeling of the on-resistance of LDMOS, VDMOS and VMOS power transistors,” IEEE Trans. Electron Devices, vol. ED-27, p. 356, 1980.
2. P. L. Hower and M. J. Geisler, 'Comparison of various source-gated geometries for power MOSFET’s,”IEEE Trans. Electron Devices, vol. ED-28, p. 1098, 1981.
3. C. Hu, M-H. Chi, and V. M. Patel, “ Optimum design of power MOSFET’s, ” IEEE Trans. Electron Devices, vol. ED-31, p. 1693, 1984.
4. K. Board, D. J. Byrne, and M. S. Towers, “The optimization of on-resistance in vertical DMOS power devices with linear and hexagonal surface geometries,” IEEE Trans. Electron Devices, vol. ED-31, p. 75, 1984.
5. J. Fernandez, S. Hidalgo, J. Paredes, F. Berta, J. Rebollo, J. Millán, and F. Serra-Mestres, “An on-resistance closed form for VDMOS devices,” IEEE Electron Device Lett., vol. 10, p. 212, 1989.
6. M. N. Darwish, “Study of the quasi-saturation effect in VDMOS transistors,” IEEE Trans. Electron Devices, vol. ED-33, p. 1710, 1986.
7. J. L. Sanchez, M. Gharbi, H. Tranduc, and P. Rossel, “Quasi-saturation effect in high-voltage VDMOS transistors,” Proc. Inst. Elec. Eng., vol. 132, p. 42, 1985.
8. J. Rebollo, E. Figueras, J. Millán, E. Lora-Tamayo, and F. Serra-Mestres, “ Analysis of the quasi-saturation region of high voltage VDMOS devices,” Solid-State Electron., vol. 30, p. 177, 1987.
9. K. Lehovec and R. S. Miller, “Field distribution in junction field-effect transistors at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-22, p. 273, 1975.
10. A. F. Franz and G. A. Franz, “BAMBI–A design model for power MOSFET’s,” IEEE Trans. Computer-Aided Des., vol. CAD-4, p. 177, 1985.
11. E. J. Ryder, “Mobility of holes and electrons in high electric fields,” Phys. Rev., vol. 90, p. 766, 1953.
12. D. M. Caughey and R. F. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE, vol. 55, p. 2192, 1967.