A static, physical VDMOS model based on the charge-sheet model

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 157-164

  Victory, James J ^a,b   Sanchez, Julian J ^b,c   Demassa, Thomas A ^b   Welfert, Bruno D ^a,b  

^a MOTOROLA INC   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; MATHEMATICAL MODELS; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

BIPOLAR POWER TRANSISTOR; CHARGE SHEET ANALYSIS; HIGH VOLTAGE INTEGRATED CIRCUITS;

MOS DEVICES;

EID: 0029778564     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477607     Document Type: Article

References (19)

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