Srtio3 thin films by mocvd for 1 gbit dram application

Integrated Ferroelectrics

Volumn 8, Issue 1-2, 1995, Pages 201-225

  Lesaicherre, Pierre Yves ^a   Yamaguchi, Hiromu ^a   Miyasaka, Yoichi ^a   Watanabe, Hirohito ^a   Ono, Haruhiko ^a   Yoshida, Masaji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78649500329     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584589508012313     Document Type: Article

References (34)

1. P.C., Fazan, Integrated Ferroelectrics., 4, 3, 247, 256 1994
2. K., Koyama, T., Sakuma, S., Yamamichi, H., Watanabe, H., Aoki, S., Ohya, Y., Miyasaka, T., Kikkawa, IEDM Tech. Digest, 823, 826 1991
3. T., Eimori, Y., Ohno, H., Kimura, J., Matsufusa, S., Kishimura, A., Yoshida, H., Sumitani, T., Maruyama, Y., Hayashide, K., Moriizumi, T., Katayama, M., Asakura, T., Horikawa, T., Shibano, H., Itoh, K., Sato, K., Namba, T., Nishimura, S., Satoh, H., Miyoshi, IEDM Tech, Digest, 631, 634 1993
4. K., Takemura, T., Sakuma, Y., Miyasaka, Appl. Phys. Lett., 64, 22, 2967, 2969 1994
5. T., Horikawa, N., Mikami, H., Ito, Y., Ohno, T., Makita, K., Sato, IEICE Trans. Electron., E77-C, 3, 385, 391 1994
6. Y., Ohno, T., Horikawa, H., Shinkawata, K., Kashihara, T., Kuroiwa, T., Okudaira, Y., Hashizume, K., Fukumoto, T., Eimori, T., Shibano, K., Arimoto, H., Itoh, T., Nishimura, H., Miyoshi, Symp. VLSI Technol. Tech. Digest, 149, 150 1994
7. C.J., Pene, H., Hu, S.B., Krupanidhi, Proc. IEEE Eighth Int. Symp. Appl. Ferroelectrics, 305, 308 1992
8. S., Yamamichi, H., Yabuta, T., Sakuma, Y., Miyasaka, Appl. Phys. Lett., 64, 1, 1644, 1646 1994
9. H., Yamaguchi, S., Matsubara, Y., Miyasaka, Jpn. J. Appl. Phys., 30, 9B, Part 1, 2197, 2199 1991
10. H., Yamaguchi, S., Matsubara, K., Takemura, Y., Miyasaka, Proc. IEEE Eighth Int. Symo. Appl. Ferroelectrics, 285, 288 1992
11. R.F., Pinizotto, E.G., Jacobs, H., Yang, S.R., Summerfelt, B.E., Gnade, Mat. Res. Soc. Proc,., 243, 463, 468 1992
12. M., Hiratani, Y., Tarutani, T., Fukazawa, M., Okamoto, K., Takagi, Thin Solid Films., 227, 100, 104 1993
13. E., Fujii, Y., Uemoto, S., Hayashi, T., Nasu, Y., Shimada, A., Matsuda, M., Kibe, M., Azuma, T., Otsuki, G., Kano, M., Scott, L.D., McMillan, C.A., Paz de Araujo, IEDM Tech. Digest, 267, 270 1992
14. M.N., Kamalasanan, N., Deepak Kumar, S., Chandra, J. Appl. Phys., 74, 1, 679, 686 1993
15. K., Arita, E., Fujii, Y., Shimada, Y., Uemoto, M., Azuma, S., Hayashi, T., Nasu, A., Inoue, A., Matsuda, Y., Nagano, S., Katsu, T., Otsuki, G., Kano, L.D., McMillan, C.A., Paz de Araujo, IEICE Trans. Electron., E77-, 3, 392, 398 1994
16. S., Hayashi, M., Huffman, Y., Shimada, T., Otsuki, G., Kano, L.D., McMillan, C.A., Paz de Araujo, Symp. VLSI Technol. Tech. Digest, 153, 154 1994
17. W.A., Feil, R.W., Wessels, L.M., Tonge, T.J., Marks, J. Appl. Phys., 67, 8, 3858, 3861 1990
18. L.A., Wills, W.A., Feil, B.W., Wessels, L.M., Tonge, T.J., Marks, J. Cryst. Growth., 107, 1, 4, 712, 715 1991
19. E.J., Donahue, D.M., Schleich, Mat. Res. Bull., 26, 1119, 1126 1991
20. H., Funakuho, Y., Inagaki, K., Shinozaki, N., Mizutani, J. Chem. Vap. Dep., 1, 73, 86 1992
21. P.C., Van Buskirk, R., Gardiner, P.S., Kirlin, Proc. Fourth Symp. Int. Ferroelectrics, 473, 480 1992
22. P.Y., Lesaicherre, H., Yamaguchi, T., Sakuma, Y., Miyasaka, M., Yoshida, A., Ishitani, Proc. Mater. Res. Soc., 310, 487, 494 1993
23. H., Yamaguchi, P.Y., Lesaicherre, T., Sakuma, Y., Miyasaka, A., Ishitani, M., Yoshida, Jpn. J. Appl. Phys., 32, 9B, Part 1, 4069, 4073 1993
24. M., Yoshida, H., Yamaguchi, T., Sakuma, Y., Miyasaka, P.Y., Lesaicherre, A., Ishitani, Presented at the ECS Fall Meeting, New Orleans, October, submitted to J. Electrochem Soc. 1993
25. P.Y., Lesaicherre, S., Yamamichi, H., Yamaguchi, K., Takemura, H., Watanabe, K., Tokashiki, K., Satoh, T., Sakuma, M., Yoshida, S., Ohnishi, K., Nakajima, K., Shihahara, Y., Miyasaka, H., Onot, to be presented, at the IEDM. December 1994
26. P.Y., Lesaicherre, H., Yamaguchi, A., Sakai, M., Yoshida, Y., Miyasaka, H., Ono, the Journal of Applied Physics., submitted to
27. O., Minhikami, M., Asahi, Jpn. J. Appl. Phys., 30, 3, 466, 471 1991
28. T., Hirano, M., Taga, T., Kobayashi, Jpn. J. Appl. Phys., 32, 12A, Part 2, L1760, L1763 1993
29. Y., Wakao, K., Tominaga, M., Takahashi, M., Okada, Abstracts of the 52nd Autumn Meeting of the Japan Society of Applied Physics, 388, Abst. No. 9a-P-3. D. 1991
30. K., Abe, S., Komatsu, Jpn. J. Appl. Phys., 32, 9B, Part 1, 4186, 4189 1993
31. P.C., Joshi, S.B., Krupanidhi, J. Appl. Phys., 73, 11, 7627, 7634 1993
32. T., Horikawa, N., Mikami, T., Makita, J., Tanimura, M., Kataoka, K., Sato, M., Nunoshita, Jpn. J. Appl-Phys., 32, 9B, Part 1, 4126, 4130 1993
33. S., Yamamichi, T., Sakuma, K., Takemura, Y., Miyasaka, Jpn. J. Appl. Phys., 30, 9B, 42193 1991
34. T., Kuroiwa, T., Honda, H., Watarai, K., Sato, Jpn. J. Appl. Phys., 32, 9B, Part 1, 3025, 3028 1993