ULSI DRAM technology with Ba0.7Sr0.3TiO3 film of 1.3nm equivalent SiO2 thickness and 10-9 A/cm2 leakage current

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 267-270

  Fujii, E ^a   Uemoto, Y ^a   Hayashi, S ^a   Nasu, T ^a   Shimada, Y ^a   Matsuda, A ^a   Kibe, M ^a   Azuma, M ^a   Otsuki, T ^a   Kano, G ^a   Scott, M ^a,b   McMillan, L D ^a,b   Paz De Araujo, C A ^a,c  

^a PANASONIC CORPORATION   (Japan)

^b Symetrix Corporation   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITANCE; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON DEVICES; LEAKAGE CURRENTS; LOW-K DIELECTRIC; SILICA; STRONTIUM COMPOUNDS; ULSI CIRCUITS;

APPLIED VOLTAGES; BA1-XSRXTIO3; DRAM TECHNOLOGY; EQUIVALENT SIO2 THICKNESS; HIGH DIELECTRIC CONSTANT MATERIALS; HIGH DIELECTRIC CONSTANTS; LOW-LEAKAGE CURRENT; STACKED STRUCTURE;

TITANIUM COMPOUNDS;

EID: 84987409721     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307357     Document Type: Conference Paper

References (8)

1. T. Ozeki, et al., "A Surrounding Isolation-Merged Plate Electrode (SIMPLE) Cell with Checkered Layout for 256Mbit DRAMs and beyond", IEDM Tech. Dig., p469, 1991.
2. M. Sakao, et al., "A Capacitor-Over-Bit-Line (COB) Cell with a Hemispherical-Grain Storage Node for 64Mb DRAMs", IEDM Tech. Dig., p655, 1990.
3. Y. Kawamoto, et al., "A 1. 28um2 Bit-Line Shielded Memory Cell Technology for 64Mb DRAMs", VLSI Symp. Tech. Dig., p13, 1990.
4. R. Moazzami, et al., "Endurance Properties of Ferroelectric PZT Thin Films", IEDM Tech. Dig., p417, 1990.
5. K. Koyama, et al., "A Stacked Capacitor with (BaxSfi-x)Ti03 for 256M DRAM", IEDM Tech. Dig., p823, 1991.
6. M. Azuma, et al., "Electrical Characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics", Proc. ISIF, 1992, to be published.
7. C. A Paz. de Araujo, et al., "Integrated Ferroelectrics", Proc. ISIF, p215, 1991.
8. J. F. Scott, et al., "Ferroelectric Memories: A Comparison with Other High-Speed Digital Devices", Proc. ISIF, p147, 1991.