Ruo2/tin-based storage electrodes for (ba, sr)tio3 dynamic random access memory capacitors

Japanese Journal of Applied Physics

Volumn 34, Issue 9, 1995, Pages 5224-5229

  Takemura, Koichi ^a   Miyasaka, Yoichi ^a   Yoshida, Masaji ^a   Yamamichi, Shintaro ^a   Lesaicherre, Pierre Yves ^a   Tokashiki, Ken ^a   Ono, Haruhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

(Ba, sr)tio3; Dram; Ruo2; Sputtering; Thin film capacitor; Tin

Indexed keywords

ANNEALING; BARIUM TITANATE; CAPACITORS; ELECTRIC PROPERTIES; ELECTRODES; INTERFACES (MATERIALS); OXIDATION; RANDOM ACCESS STORAGE; RUTHENIUM COMPOUNDS; SPUTTER DEPOSITION; THERMAL EFFECTS; TITANIUM NITRIDE;

BARIUM STRONTIUM TITANATE DYNAMIC RANDOM ACCESS MEMORY CAPACITORS; POLYSILICON CONTACT PLUGS; RUTHENIUM DIOXIDE/TITANIUM NITRIDE BASED STORAGE ELECTRODES;

DIELECTRIC FILMS;

EID: 0029371576     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.5224     Document Type: Article

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