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Volumn , Issue 33 a, 1976, Pages 168-176
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NATIVE OXIDES ON GaAs FOR MOSFETS: ANNEALING EFFECTS AND INVERSION-LAYER MOBILITIES.
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Author keywords
[No Author keywords available]
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Indexed keywords
HEAT TREATMENT - ANNEALING;
SEMICONDUCTOR DEVICES, MIS - STRUCTURES;
SEMICONDUCTOR MATERIALS - ELECTRIC PROPERTIES;
MOSFET;
TRANSISTORS, FIELD EFFECT;
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EID: 0017212464
PISSN: None
EISSN: None
Source Type: Journal
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (9)
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