메뉴 건너뛰기




Volumn 40, Issue 6, 1993, Pages 1172-1174

A Transconductance Spectroscopy Approach to Device Level Surface State Characterization

Author keywords

[No Author keywords available]

Indexed keywords

SPECTROSCOPIC ANALYSIS;

EID: 0027610559     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214747     Document Type: Article
Times cited : (4)

References (8)
  • 3
    • 0001226170 scopus 로고
    • Surface influence on the conductance DLTS spectra of GaAs MESFET's
    • S. R. Blight, R. H. Wallis, and H. Thomas, “Surface influence on the conductance DLTS spectra of GaAs MESFET's,” IEEE Trans. Elec tron Devices, vol. ED-33, no. 10, pp. 1447–1453, 1986.
    • (1986) IEEE Trans. Elec tron Devices , vol.ED-33 , Issue.10 , pp. 1447-1453
    • Blight, S.R.1    Wallis, R.H.2    Thomas, H.3
  • 4
    • 0025431836 scopus 로고
    • Modeling the effects of surface states on DLTS spectra of GAAs MESFET's
    • J. H. Zhao, “Modeling the effects of surface states on DLTS spectra of GAAs MESFET's,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1235–1244, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.5 , pp. 1235-1244
    • Zhao, J.H.1
  • 5
    • 0023984067 scopus 로고
    • Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies
    • P. H. Ladbrooke and S. R. Blight, “Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies,” IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 257–267, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.3 , pp. 257-267
    • Ladbrooke, P.H.1    Blight, S.R.2
  • 6
    • 0024065822 scopus 로고
    • m) frequency dispersion
    • m) frequency dispersion,” Solid-State Electron., vol. 31, no. 8, pp. 1315–1320, 1988.
    • (1988) Solid-State Electron. , vol.31 , Issue.8 , pp. 1315-1320
    • Kachwalla, Z.1
  • 7
    • 0003680201 scopus 로고
    • Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field-effect transistors
    • J. H. Zhao, P. F. Tang, R. Hwang, and S. Chang, “Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field-effect transistors,” J. Appl. Phys., vol. 70, no. 3, pp. 1899–1901, 1991.
    • (1991) J. Appl. Phys. , vol.70 , Issue.3 , pp. 1899-1901
    • Zhao, J.H.1    Tang, P.F.2    Hwang, R.3    Chang, S.4
  • 8
    • 84908720869 scopus 로고
    • Carnegie Mellon University, Pittsburgh, PA
    • J. W. Chen, Ph.D. dissertation, Carnegie Mellon University, Pittsburgh, PA, pp. 311–326, 1979.
    • (1979) Ph.D. dissertation , pp. 311-326
    • Chen, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.