Characterizing traps in MESFETs using internal transconductance (gm) frequency dispersion

Solid State Electronics

Volumn 31, Issue 8, 1988, Pages 1315-1320

  Kachwalla, Z ^a  

^a CSIRO   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTOR MATERIALS;

DEEP-LEVEL TRAPS; GALLIUM ARSENIDE MICROWAVE DEVICES; INTERNAL TRANSCONDUCTANCE; LOW-NOISE MICROWAVE DEVICE; MESFET; TRAPPED CARRIERS;

TRANSISTORS, FIELD EFFECT;

EID: 0024065822     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(88)90431-5     Document Type: Article

References (8)

1. Surface influence on the conductance DLTS spectra of GaAs MESFET's