On the interpretation of electrical measurements on the GaAs-MOS system

Solid State Electronics

Volumn 21, Issue 2, 1978, Pages 409-416

  Kohn, E ^a   Hartnagel, H L ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICES - SEMICONDUCTOR METAL BOUNDARIES; TRANSISTORS, FIELD EFFECT;

SEMICONDUCTOR DEVICES, MIS;

EID: 0017932967     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(78)90271-X     Document Type: Article

References (33)

1. International Symposium on GaAs and Related Compounds
2. Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
3. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
4. Electrical Characteristics of the Silicon Nitride-Gallium Arsenide Interface
5. Trap-assisted charge injection in MNOS structures
6. A linear-sweep MOS-C technique for determining minority carrier lifetimes
7. Surface states at steam-grown silicon-silicon dioxide interfaces
8. Cole-cole plotting of surface state admittance in MIS capacitors
9. Small-signal admittance of the insulator-n type-gallium-arsenide interface region
10. Inadequacy of the classical theory of the MOS transistor operating in weak inversion