Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 930-936

  Caffin, David ^a   Duchenois, A M ^a   Heliot F ^a   Besombes, C ^a   Benchimol, Jean Louis ^a   Launay, P ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DRY ETCHING; LEAKAGE CURRENTS; METALLIZING; PLATINUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

WET ETCHING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031168578     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585538     Document Type: Article

References (15)

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