Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

IEEE Electron Device Letters

Volumn 13, Issue 11, 1992, Pages 560-562

  Tanaka, Shin ichi ^a   Kasahara, Kensuke ^a   Shimawaki, Hidenori ^a   Honjo, Kazuhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HETEROJUNCTIONS; MICROWAVE MEASUREMENT; MOLECULAR BEAM EPITAXY; PASSIVATION; POLYIMIDES;

BERYLLIUM DIFFUSION; HBT STRESS CURRENT BEHAVIOR; POLYIMIDE PASSIVATION; POLYIMIDE PLANARIZATION; S-PARAMETER MEASUREMENT; SHORT-TERM DEGRADATION; SURFACE RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 0026953114     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192839     Document Type: Article

References (7)

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