InGaAs/InP double heterostructure bipolar transistors for high speed and high voltage driver circuit applications

1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1993, Pages 565-568

  Bauknecht, R ^a   Duran, H ^a   Schmatz, M ^a   Melchior, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYER STRUCTURE; HETEROSTRUCTURE BIPOLAR TRANSISTORS; HIGH VOLTAGE DRIVER CIRCUITS; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE;

HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

BIPOLAR TRANSISTORS;

EID: 0027226503     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)