InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 59, Issue 21, 1991, Pages 2697-2699

  Ohkubo, Michio ^a   Iketani, Akira ^a   Ijichi, Tetsurou ^a   Kikuta, Toshio ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

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EID: 0001069416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.105888     Document Type: Article

References (5)