Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors

Electronics Letters

Volumn 29, Issue 8, 1993, Pages 724-725

  Song, J I ^a   Hong, W P ^a   Bhat, R ^a   Chough, K B ^a   Hayes, J R ^a   Sugeng, B ^b   Wei, C J ^b   Hwang, C M ^b  

^a TELCORDIA TECHNOLOGIES   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

Bipolar devices; Microwave devices; Semiconductor devices and materials; Transistors

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MICROWAVE DEVICES; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPEED; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

COLLECTOR EMITTER BREAKDOWN VOLTAGE; CURRENT DENSITY; CURRENT GAIN; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; MICROWAVE POWER APPLICATION; MICROWAVE POWER DEVICE; OFFSET VOLTAGE;

BIPOLAR TRANSISTORS;

EID: 0027580727     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930484     Document Type: Article

References (4)

1. Tokumitsu, E., Dentai, A. G., Joyner, C. H., and Chandrasekhar, S.: ‘InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfer delta doping in the collector region’, Appl. Phys. Lett., 1990, 57, (26), pp. 2841-2843
2. Vlcek, J. C., and Fonstad, C. G.: ‘Multiply-graded InGaAJAs heterojunction bipolar transistors’, Electron. Lett., 1991, 27, pp. 1213-1214
3. Stanchina, W. E., Metzger, R. A., Liu, T., Lou, P. F., Hensen, J. F., Pierce, M. W., and Mccray, L. G.: ‘60GHz InAlAs/InGaAs/lnP DHBTs grown by MOVPE + MBE’. 1991 Device Research Conf., Paper VIA-6, Boulder, CO, USA
4. Feygenson, A., Ritter, D., Hamm, R. A., Smith, P. R., Montgomery, R. K., Yadvish, R. D., Temkin, H., and Panish, M. B.: ‘InGaAs/InP composite collector heterostructure bipolar transistors’. Electron. Lett., 1992, 28, pp. 607-609