Reliability of InP-Based HBT IC Technology for High-Speed, Low-Power Applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 43, Issue 12, 1995, Pages 3048-3054

  Hafizi, Madjid ^a   Stanchina, William E ^a   Williams, Freddie ^a   Jensen, Joseph F ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; HYDROGEN; INTEGRATED CIRCUITS; PHOTODIODES; RESISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TANTALUM COMPOUNDS; TEMPERATURE; THIN FILMS;

ALUMINUM INDIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; MICROWAVE POWER AMPLIFICATION; TANTALUM NITRIDE RESISTORS; THIN FILM RESISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029515723     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.475673     Document Type: Article

References (12)

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