Breakdown-Speed Considerations in InP/InGaAs Single- and Double-Heterostructure Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 40, Issue 1, 1993, Pages 2-8

  Tomizawa, Kazutaka ^d  

^a TEXAS INSTRUMENTS   (United States)

^b Solid State Electronics Laboratory Department Of Electrical Engineering Computer Science igan ^*  (United States)

^c NORTEL NETWORKS   (Canada)

^d MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

AVALANCHE IMPACT IONIZATION; BREAKDOWN SPEED CONSIDERATIONS; CUTOFF FREQUENCY; DOPING PROFILES; DRIFT-DIFFUSION MODELING; GRADED BASE-COLLECTOR JUNCTIONS; SINGLE/DOUBLE-HETEROSTRUCTURE BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0027187369     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249416     Document Type: Article

References (11)

1. R. N. Nottenburg, Y.-K. Chen, M. B. Panish, R. Hamm, and D. A. Humphrey, “High-current gain submicrometer InGaAs/InP heterostructure bipolar transistors,” IEEE Electron Device Lett., vol. 9, no. 10, pp. 524–526, 1988.
2. Y.-K. Chen, R. N. Nottenbury, M. B. Panish, R. A. Hamm, and D. A. Humphrey, “Subpicosecond InP/InGaAs heterostructure bipolar transistors,” IEEE Electron Device Lett., vol. 10, no. 6, pp. 267-269, June 1989.
3. C- S. Kyono, P. Cheung, C. J. Pinzone, N. D. Gerrard, T. Bustami, C. M. Maziar, D. P. Neikirk, and R. D. Dupuis, “High-gain, high-speed InGaAs/InP heterojunction bipolar transistors,” in IEEE IEDM Tech. Dig., 1990, pp. 677–680.
4. J. Hu, H.-F. Chau, D. Pavlidis, K. Tomizawa, and P. Marsh, “Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors,” in Proc. IEEE/Cornell Conf on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Aug. 1991, pp. 104–113.
5. H. F. Chau, J. Hu, D. Pavlidis, and K. Tomizawa, “Breakdown speed considerations in AlGaAs/GaAs heterojunction bipolar transistors with special collector designs,” IEEE Trans. Electron Devices, vol. 39, no. 12, pp. 2711–2719, Dec. 1992.
6. H.-F. Chau, D. Pavlidis, J. Hu, and K. Tomizawa, “Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operations,” in Proc. 4th Int. Conf. on Indium Phosphide and Related Materials (Newport, RI), Apr. 1992.
7. K. Sakui, T. Hasegawa, T. Fuse, T. Seshita, S. Aritome, S. Watanabe, K. Ohuchi, and F. Masuoka, “A new reverse base current (RBC) of the bipolar transistor induced by impact ionization,” Japan. J. Appl. Phys., vol. 28, no. 12, pp. L2150-2152, 1989.
8. J. J. Liou, and J. S. Yuan, “Modeling the reverse base current in phenomenon due to avalanche effect in advanced bipolar transistors, ’’ IEEE Trans. Electron Devices, vol. 37, no. 10, pp. 2274–2276, 1990.
9. J. Hu, K. Tomizawa, and D. Pavlidis, “Transient Monte Carlo analysis and application to heterojunction bipolar transistor switching,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2138–2145, 1989.
10. R. J. Malik, A. Feygenson, D. Ritter, R. A. Hamm, M. B. Panish, J. Nagle, K. Alavi, and A. Y. Cho, “Temperature dependence of collector breakdown voltage and output conductance in HBT’s with AlGaAs, GaAs, InP and InGaAs collectors,” in IEDM Tech. Dig., 1991, 805–809.
11. H.-F. Chau and D. Pavlidis, “A physics-based fitting and extrapolation method for measured impact ionization coefficients in III-V semiconductors,” J. Appl. Phys., vol. 72, no. 2. pp. 531–538, July 15, 1992.