Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy

IEEE Electron Device Letters

Volumn 7, Issue 9, 1986, Pages 516-518

  Pelouard, J ^a   Hesto, P ^a   Praseuth, J ^b   Goldstein, L ^b  

^a Laboratoire de Microstructures et de Microelectronique ^*  (France)

^b Laboratoire de Bagneus ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747294366     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26457     Document Type: Article

References (12)

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2. M. F. Chang, P. M. Asbeck, D. L. Miller, and K. C. Wang, “GaAs/ (GaA1)As heterojunction bipolar transistors using a self-aligned substitutional emitter process,” IEEE Electron Device Lett., vol. EDL-7, pp. 8–10, Jan. 1986.
3. R. J. Malik, J. R. Hayes, F. Capasso, K. Alavi, and A. Y. Cho, “High-gain AI 48 In 52 As/In 53 Ga 48 As vertical n-p-n heterojunction bipolar transistor grown by molecular beam epitaxy,” IEEE Electron Device Lett., vol. EDL-4, pp. 383–385, 1983.
4. M. Chaudhury, K. Tabatabaie-Alavi, and C. G. Fonstad, “Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistor for integrated circuit applications,” IEEE Electron Device Lett., vol. EDL-5, p. 251, 1984.
5. omxH. Beneking and L. M. Su, “Double heterojunction NpN for GaAlAs/ GaAs bipolar transistor,” Electron. Lett., vol. 18, p. 25, 1982.
6. P. M. Asbeck, D. L. Miller, R. J. Andersen, and F. H. Eisen, “GaAs/ (GaAl)As heterojunction bipolar transistors with buried oxygen-im-planted isolation layer,” IEEE Electron Device Lett., vol. EDL-5, pp. 310–312, 1984.
7. D. Ankri, R. Azoulay, E. Caquot, J. Dangla, C. Dubon, and J. F. Palmier, “Analysis of D.C. characteristics of GaA1As/GaAs double heterojunction bipolar transistors,” Solid-State Electron., vol. 29, no. 2, pp. 141–149.
8. L. M. Su, N. G. Grote, R. Kaumanns, and H. Schroeter, “N-p-n-N double heterojunction bipolar transistor on InGaAsP/InP,” Appl. Phys. Lett., vol. 47, pp. 28–30, 1985.
9. J. Degani, R. F. Leheny, R. E. Nahory, and J. P. Heritage, “Velocity field characteristics of minority carriers (electrons) in p-In 53 Ga 47 As,” Appl. Phys. Lett., vol. 39, pp. 569–572, 1981.
10. L. Goldstein, J-P Praseuth, J-L Pelouard, and P. Hesto, to be published.
11. C. Dubon-Chevalier, A. M. Duchenois, J. F. Bresse, and D. Ankri, “Reproducible low-resistivity AuMn ohmic contact for p-type GaAs,” Electron. Lett., vol. 21, no. 14, pp. 614–615, 1985.
12. J-L Pelouard, P. Hesto, and R. Castagne, “Modeling of the InP/ InGaAs Ballistic HJBT,” in Proc Comm. 10th IEEE/Cornell Univ. Conf. Advanced Concepts in High Speed Semiconductor Circuits (Ithaca, NY), July 29–31, 1985, pp. 52–60.