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Volumn 38, Issue 9, 1995, Pages 1703-1709
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InP InGaAs double-heterostructure bipolar transistors for high-speed ICs and OEICs
a
a
NTT CORPORATION
(Japan)
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Author keywords
DHBT; InGaAs; InP; OEIC
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRON TRANSPORT PROPERTIES;
HETEROJUNCTIONS;
INTEGRATED OPTOELECTRONICS;
INTERFACES (MATERIALS);
PHOTODIODES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
CONDUCTION BAND DISCONTINUITY;
CURRENT BLOCKING EFFECTS;
DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS;
ELECTRON BLOCKING EFFECTS;
OSCILLATION FREQUENCY;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0029373658
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(95)00042-R Document Type: Article |
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Times cited : (31)
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References (18)
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