Fabrication and I-V-T behaviour of n-GaAs/semi-insulating gaInP : Fe/n-GaAs structures

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 371-381

  Lourdudoss, S ^a   Holz, R ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDRIDES; INTERFACES (MATERIALS); IRON; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

FRENKEL POOLE TECHNIQUE; GALLIUM INDIUM PHOSPHIDE;

HETEROJUNCTIONS;

EID: 0031213173     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00180-2     Document Type: Article

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