High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 μm DFB laser diodes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 777-780

  Steinhagen, F ^a   Hilmer, H ^a   Loesch, R ^a   Schlapp, W ^a   Goebel, R ^a   Kuphal, E ^a   Hartnagel, H L ^a   Burkhard, H ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN;

COMPLEX COUPLED STRAIN COMPENSATED LASER DIODES; INTENSITY MODULATION BANDWIDTHS;

SEMICONDUCTOR LASERS;

EID: 0029709321     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)