Optical characterization of InGaAs/InP quantum wire overgrowth by hydride VPE with InP

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 467-470

  Kerkel, K ^a   Braun, W ^a   Forchel, A ^a   Lourdudoss, S ^a   Seifert, W ^a   Carlsson, N ^a   Samuelson, L ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HYDRIDES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACES;

OPTICAL CHARACTERIZATION; QUANTUM WIRE OVERGROWTH; RADIATIVE LIFETIMES; SIDE WALL RECOMBINATION VELOCITY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030672955     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)