Vertical integration of an InGaAs/InP HBT and a 1.55μm strained MQW p-substrate laser

IEE Proceedings: Optoelectronics

Volumn 143, Issue 1, 1996, Pages 107-109

  Eriksson, U ^a   Evaldsson, P ^a   Wallin, J ^a   Stalnacke, B ^a   Lourdudoss, S ^a   Willen, B ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

InGaAs InP bipolar transistor; MQW p substrate laser; Optical feedback; Slope efficiency; Vertical integration

Indexed keywords

ELECTRIC CURRENTS; FEEDBACK; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FILMS; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE;

DOPANT DIFFUSION; LASER MESAS; MULTI QUANTUM WELL LASERS; OPTICAL FEEDBACK; THRESHOLD CURRENT; VERTICAL INTEGRATION;

INTEGRATED OPTOELECTRONICS;

EID: 0030081244     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960130     Document Type: Article

References (10)

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