Temporally resolved selective regrowth of InP around [110] and [110] mesas

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 389-394

  Lourdudoss, S ^a   Rodriguez Messmer E ^a   Kjebon, O ^a   Landgren, G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

III V compounds; InP; Patterned substrates; Reactive ion etching; Selective epitaxy; Selective regrowth

Indexed keywords

EID: 0343395491     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666608     Document Type: Article

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