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Volumn 70, Issue 21, 1997, Pages 2828-2830

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

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Indexed keywords


EID: 0040992717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119015     Document Type: Article
Times cited : (7)

References (14)
  • 7
    • 85033310644 scopus 로고    scopus 로고
    • note
    • High resolution transmission electron microscopy and energy dispersive x-ray analysis revealed a thin layer containing less than 1 at. % of indium and no phosphorus on the GaAs surface after the growth of InP islands. For the details of the growth, see Ref. 5.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.