Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed bragg reflectors

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 893-904

  Deppe, Dennis G ^a,b,c,d,e,f   Huffaker, Diana L ^a,b,e,g   Oh, Tchang Hun ^b,e,h,i   Deng, Hongyu ^b,e,j,k   Deng, Qing ^b,e,l  

^a IEEE   (United States)

^b The University of Texas at Austin   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d LUCENT TECHNOLOGIES   (United States)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^f Electrical and Computer Engineering Dept   (United States)

^g UNIVERSITY OF ARIZONA   (United States)

^h Seoul National University   (South Korea)

ⁱ LG Electronics Inc   (South Korea)

^j UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^k HEWLETT PACKARD COMPANY   (United States)

^l PEKING UNIVERSITY   (China)

more..

Author keywords

Cavity resonators; Laser modes; Laser resonators; Surface emitting lasers

Indexed keywords

CAVITY RESONATORS; DIELECTRIC DEVICES; LASER MODES; LASER RESONATORS; MIRRORS;

DISTRIBUTED BRAGG REFLECTORS; FABRY PEROT MICROCAVITY LASERS; OXIDE CONFINEMENT; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031152870     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640643     Document Type: Article

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