Multiwavelength, densely-packed 2 × 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation

IEEE Photonics Technology Letters

Volumn 8, Issue 7, 1996, Pages 858-860

  Huffaker, D L ^b   Deppe, D G ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRIC CURRENTS; HETEROJUNCTIONS; LASER MODES; NATURAL FREQUENCIES; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

CONTINUOUS WAVE THRESHOLD CURRENTS; DISTRIBUTED BRAGG REFLECTOR; LASING WAVELENGTH; SELECTIVE OXIDATION; SIGNAL TRANSMISSION; VERTICALLY CAVITY SURFACE EMITTING LASER ARRAY;

SEMICONDUCTOR LASERS;

EID: 0030190421     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502250     Document Type: Article

References (12)

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