Properties of small-aperture selectively oxidized VCSELs

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1996, Pages 144-145

  Choquette, Kent D ^a   Chow, W W ^a   Hadley, G Ronald ^a   Hou, H Q ^a   Geib, K M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; FERMI LEVEL; FINITE DIFFERENCE METHOD; LEAKAGE CURRENTS; LIGHT SCATTERING; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0030406917     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)