Simulating single-event burnout of n-channel power MOSFET's

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 1001-1008

  Johnson, Gregory H ^a   Hohl, Jakob H ^a   Schrimpf, Ronald D ^a   Galloway, Kenneth F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FAILURE ANALYSIS; IONS; RADIATION EFFECTS; SPACE APPLICATIONS;

HEAVY IONS; N-CHANNEL POWER MOSFET; PARASITIC N-P-N TRANSISTOR; SINGLE-EVENT BURNOUT MECHANISM;

MOSFET DEVICES;

EID: 0027594721     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210211     Document Type: Article

References (11)

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3. P. T. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits. New York: Wiley, 1989.
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10. J. L. Titus, G. H. Johnson, R. D. Schrimpf, and K. F. Galloway, “Single-event burnout of power bipolar junction transistors,” IEEE Trans. Nucl. Sci., vol. 38, pp. 1315–1322, 1991.
11. G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga, “Temperature dependence of single-event burnout in n-channel power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 39, pp. 1605–1612, Dec. 1992.