Temperature dependence of single-event burnout in n-channel power mosfets

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1605-1612

  Johnson, Gregory H ^a   Schrimpf, Ronald D ^a   Galloway, Kenneth F ^a   Koga, Rocky ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 55249100702     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211342     Document Type: Article

References (9)

1. A.E. Waskiewicz, J.W. Groninger, V.H. Strahan, and D.M. Long, “Burnout of Power MOS Transistors with Heavy Ions of 252-Cf,” IEEE Trans. Nucl. Sci., vol. NS33, pp. 1710–1713, 1986.
2. T.P. Ma and P.V. Dressendorfer, Ionizating Radiation Effects in MOS Devices and Circuits. New York: Joint Wiley & Sons, 1989.
3. J.H. Hohl and K.F. Galloway, “Analytical Model for Single Event Burnout of Power MOSFETs,” IEEETrans.Nucl.Sci., vol. NS-34, pp. 1275–1280, 1987.
4. D.L. Oberg and J.L. Wert, “First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections,” IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1736–1741, 1987.
5. J.L. Titus, L.S. Jamiolkowski, and C.F. Wheatley, “Development of Cosmic Ray Hardened Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. NS-36, pp. 2375–2382, 1989.
6. A.E. Waskiewicz, J.W. Groninger, “Burnout Thresholds and Cross Section of Power MOS Transistors with Heavy Ions,” Defense Nuclear Agency Technical Report, Contract No. DNA-MIPR-88-507, pp. 67–70, Feb 1990.
7. G.H. Johnson, “Features of a Heavy-Ion-Generated-Current Filament Used in Modeling Single-Event Burnout of Power MOSFETs,” M. S. Thesis, University of Arizona, 1990.
8. J.H. Hohl and G.H. Johnson, “Features of the Triggering Mechanism for Single Event Burnout of Power MOSFETs, “IEEE Trans. Nucl. Sci., vol. NS-36, pp. 2260–2266, 1989.
9. C.R. Crowell and S.M. Sze, “Temperature Dependence of Avalanche Multiplication in Semiconductors,” Appl. Phys. Let., vol. 9, pp. 242–244, 1966.