Analysis of Leakage Currents in Poly-Silicon Thin Film Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 385-388

  Hack, M ^a   Wu, I W ^a   King, T J ^a   Lewis, A G ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POLYCRYSTALLINE MATERIALS; POLYSILICON; TEMPERATURE DISTRIBUTION; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; CHARGE CARRIERS; ELECTRON TUNNELING; NUMERICAL METHODS; TRANSISTORS;

BIAS TEMPERATURE; C. THIN FILM TRANSISTOR (TFT); CRYSTALLINE SILICON THIN FILMS; DRAIN BIAS; POLY SILICON; POLY-CRYSTALLINE SILICON; SILICON THIN FILM TRANSISTORS; STATISTICAL BEHAVIOR; TEMPERATURE DEPENDENCE; TUNNELING MECHANISM;

LEAKAGE CURRENTS;

FIELD TUNNELING; POLYSILICON; TEMPERATURE DEPENDENCE; THIN FILM TRANSISTOR (TFTS);

EID: 0027814115     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Hack and A. G. Lewis, "Avalanche-induced effects in polysilicon thin-film transistors", IEEE EDL, vol. 12, pp. 203-205, May 1991
2. l. Wei Wu, A. G. Lewis, T.-Y. Huang, W. B. Jackson and A. Chiang, "Mechanism and device to device variation of leakage current in polysilicon thin film transistors", IEDM Tech. Digest pp. 867-870, 1990
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