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Volumn 8, Issue 8, 1987, Pages 361-364

High-Performance Thin-Film Transistors in Low-Temperature Crystallized LPCVD Amorphous Silicon Films

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SOLID STATE DEVICES, THIN FILM;

EID: 0023401951     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1987.26660     Document Type: Article
Times cited : (102)

References (13)
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    • S. D. Malhi et-al., “Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon,” IEEE Trans. Electron Devices, vol. ED-32, p. 258. Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 258
    • Malhi, S.D.1
  • 2
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    • The feasibility of silicon on garnet technology
    • Apr.
    • P. H. L. Rasky, D. W. Greve, M. H. Kryder, and S. Dutta, “The feasibility of silicon on garnet technology,” J. Appl. Phys., vol. 57, p. 4077, Apr. 1985.
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    • Rasky, P.H.L.1    Greve, D.W.2    Kryder, M.H.3    Dutta, S.4
  • 4
    • 0022705181 scopus 로고
    • Polycrystalline silicon device technology for large area electronics
    • Apr.
    • W. G. Hawkins, “Polycrystalline silicon device technology for large area electronics,” IEEE Trans. Electron Devices, vol. ED-33, p. 477, Apr. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 477
    • Hawkins, W.G.1
  • 5
    • 0023133938 scopus 로고
    • Effects of H+ implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics
    • Jan.
    • M. Rodder, D. Antoniadis, F. Scholz, and A. Kalnitsky, “Effects of H + implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics,” IEEE Electron Device Lett., vol. EDL-8, p. 27, Jan. 1987.
    • (1987) IEEE Electron Device Lett , vol.EDL-8 , pp. 27
    • Rodder, M.1    Antoniadis, D.2    Scholz, F.3    Kalnitsky, A.4
  • 6
    • 0022662823 scopus 로고
    • Low temperature polysilicon super thin film transistor (LSFT)
    • Feb.
    • T. Noguchi, H. Hayashi, and T. Ohshima, “Low temperature polysilicon super thin film transistor (LSFT),” Japan. J. Appl. Phys., vol. 25, p. L121, Feb. 1986.
    • (1986) Japan. J. Appl. Phys , vol.25 , pp. 1121
    • Noguchi, T.1    Hayashi, H.2    Ohshima, T.3
  • 8
    • 0022820681 scopus 로고
    • Fabrication of high voltage polysilicon TFT's on an insulator
    • Nov.
    • P. Pennell, R. Catero, and S. Lovelis, “Fabrication of high voltage polysilicon TFT's on an insulator,” J. Electrochem. Soc., vol. 133, p. 2358, Nov. 1986.
    • (1986) J. Electrochem. Soc , vol.133 , pp. 2358
    • Pennell, P.1    Catero, R.2    Lovelis, S.3
  • 9
    • 0022149343 scopus 로고
    • Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's
    • Nov.
    • M. Rodder and D. A. Antoniadis, “Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's,” IEEE Electron Device Lett., vol. EDL-6, p. 570, Nov. 1985.
    • (1985) IEEE Electron Device Lett , vol.EDL-6 , pp. 570
    • Rodder, M.1    Antoniadis, D.A.2
  • 10
    • 84939333239 scopus 로고    scopus 로고
    • Large grain polycrystalline silicon by low temperature annealing of LPCVD amorphous silicon films
    • M. K. Hatalis and D. W. Greve, “Large grain polycrystalline silicon by low temperature annealing of LPCVD amorphous silicon films,” submitted to J. Appl. Phys.
    • submitted to J. Appl. Phys
    • Hatalis, M.K.1    Greve, D.W.2
  • 11
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    • Interpretation of capacitance-voltage characteristics of polycrystalline thin-film transistors
    • Feb.
    • D. W. Greve and V. R. Hay, “Interpretation of capacitance-voltage characteristics of polycrystalline thin-film transistors,” J. Appl. Phys., vol. 61, 1176, Feb. 1987.
    • (1987) J. Appl. Phys , vol.61 , Issue.1176
    • Greve, D.W.1    Hay, V.R.2
  • 12
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    • Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon
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    • C. V. Thomson and H. I. Smith, “Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon,” Appl. Phys. Lett., vol. 44, p. 603, Mar. 1984.
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    • Thomson, C.V.1    Smith, H.I.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.