Recrystallization of amorphous silicon films deposited by low-pressure chemical vapor deposition from Si2H6 gas

Journal of Applied Physics

Volumn 69, Issue 3, 1991, Pages 1703-1706

  Nakazawa, Kenji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012830366     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.347215     Document Type: Article

References (10)