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Applied Physics Letters

Volumn 63, Issue 5, 1993, Pages 631-632

Coulomb blockade in silicon based structures at temperatures up to 50 K

(4) Paul, D J a Cleaver, J R A a Ahmed, H a Whall, T E b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000979605 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.109972 Document Type: Article

Times cited : (39)

References (10)

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- Nakazato, K.¹ Thornton, T.J.² White, J.³ Ahmed, H.⁴

7
- 0001689377
- edited by T. P. Pearsall (Academic, San Diego)
- (1991) Semiconductors and Semimetals , vol.33 , pp. 223
- Kasper, E.¹ Schaffler, F.²

8
- 84953990658
- (1992) Philos. Mag. B , vol.65 , pp. 701
- Yakimov, A.I.¹ Markov, V.A.² Dvurechenskii, A.V.³ Pehelyakov, O.P.⁴

9
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- (1993) Microelectron. Eng. , vol.21 , pp. 349
- Paul, D.J.¹ Cleaver, J.R.A.² Ahmed, H.³

10
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- (1991) Appl. Phys. Lett. , vol.58 , pp. 2117
- Ismail, K.¹ Meyerson, B.S.² Wang, P.J.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.