Room-Temperature Single-Electron Memory

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1628-1638

  Yano, Kazuo ^a   Seki, Koichi ^a   Ishii, Tomoyuki ^a   Hashimoto, Takashi ^a   Kobayashi, Takashi ^a   Murai, Fumio ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; ELECTRODES; ELECTRONS; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS; TRANSISTORS;

PERSONAL DIGITAL ASSISTANTS; SINGLE ELECTRON BOX; SINGLE ELECTRON MEMORY; SINGLE ELECTRON TRANSISTORS; TRANSISTOR MEMORY;

ELECTRON DEVICES;

EID: 0028514569     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310117     Document Type: Article

References (18)

1. D. V. Averin and K. K. Likharev, in Quantum Effects in Small Disordered Systems, B. Al’tshuler et al., Eds. Amsterdam: Elsevier, 1991.
2. K. K. Likharev, in Granular Nanoelectronics, D. K. Ferry, J. R. Baker and C. Jacoboni, Eds. New York: Plenum, 1991.
3. H. Grabert and M. H. Devoret, Eds., Single-Charge Tunneling, NATO ASI Series B. New York: Plenum, 1991.
4. I. Giaever and H. R. Zeller, Phys. Rev. Lett., vol. 20, no. 26, p. 1504, 1968.
5. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett., vol. 59, no. 1, p. 109, 1987.
6. L. S. Kuzmin, P. Delsing, T. Claeson, and K. K. Likharev, Phys. Rev. Lett. vol. 62, p. 2539, 1989.
7. L. J. Geerligs, V. F. Andregg, P. A. Holweg, J. E. Mooij, H. Pothier, D. Esteve, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. vol. 64, p. 2691, 1990.
8. L. P. Kouwenhoven, A. T. Johnson, N. C. van der Vaart, C. J. P. M. Harmans, and C. T. Foxon, Phys. Rev. Lett., vol. 67, p. 1626, 1991.
9. T. A. Fulton, P. L. Gammel, and L. N. Dunkleberger, Phys. Rev. Lett. vol. 67, p. 3148, 1991.
10. D. A. Averin and K. K. Likharev in Single-Charge Tunneling, H. Grabert and M. H. Devoret, Eds., NATO ASI Series B. New York: Plenum, 1991.
11. K. Nakazato, R. J. Blaikie, J. R. Cleaver, and H. Ahmed, Electron. Lett., vol. 29, no. 4, p. 384, 1993; K. Nakazato and H. Ahmed, Advanced Material, vol. 5, no. 9, p. 668, 1993; K. Nakazato. R. J. Blaikie, H. Ahmed, J. Appl. Phys., preprint.
12. K. Yano, D. K. Ferry, and K. Seki, IEEE Int. Electron Devices Meet., p. 557, 1992.
13. C. Schonenberger and H. van Houten, 1992 Int. Conf on Solid State Devices and Materials, p. 726, 1992.
14. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi. F. Murai, and K. Seki, IEEE Int. Electron Devices Meet. 1993, 1993, p. 541.
15. A. A. Middleton and N. S. Wingreen, P/m. Rev. Lett., vol. 71, no. 19, p. 3198, 1993; see also S. Kirkpatrick, Rev. Mod. Phys., vol. 45, no. 4, p. 574, 1973.
16. M. J. Kirton and M. J. Uren, Advances in Physics, vol. 38, p. 367, 1989.
17. L. S. Kuzmin and K. K. Likharev, LETP Lett., vol. 45, p. 496, 1987.
18. U. Meirav, M. Kastner, and S. J. Wind, Phys. Rev. Lett., vol. 65, p. 771, 1990.