Single-electron memory

Electronics Letters

Volumn 29, Issue 4, 1993, Pages 384-385

  Nakazato, K ^a   Blaikie, R J ^a   Cleaver, J R A ^b   Ahmed, H ^b  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Memories; Semiconductor devices; Tunnelling

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CHANNEL CAPACITY; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; SEMICONDUCTOR DEVICE STRUCTURES;

COULOMB BLOCKADE EFFECT; SINGLE ELECTRON MEMORY CELL;

SEMICONDUCTOR STORAGE;

EID: 0027547903     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930258     Document Type: Article

References (7)

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