Electron beam nanolithography with image reversal by ECR plasma oxidation

Microelectronic Engineering

Volumn 27, Issue 1-4, 1995, Pages 125-128

  Kurihara, K ^a   Iwadate, K ^a   Namatsu, H ^a   Nagase, M ^a   Murase, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; ELECTRON CYCLOTRON RESONANCE; IMAGE PROCESSING; MASKS; OXIDATION; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SUBSTRATES;

ANISOTROPIC ETCHING; ELECTRON BEAM NANOLITHOGRAPHY; IMAGE REVERSAL; PLASMA OXIDATION; RESIST PATTERNS;

NANOTECHNOLOGY;

EID: 0029251774     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(94)00071-2     Document Type: Article

References (5)

1. Reactive ion stream etching utilizing electron cyclotron resonance plasma
2. A novel high-speed nanometric electron beam lithography system: EB–F