Fabrication technique for Si single-electron transistor operating at room temperature

Electronics Letters

Volumn 31, Issue 2, 1995, Pages 136-137

  Takahashi, Y ^a   Nagase, M ^a   Namatsu, H ^a   Kurihara, K ^a   Iwdate, K ^a   Nakajima, Y ^a   Horiguchi, S ^a   Murase, K ^a   Tabe, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

SIMOX; Transistors

Indexed keywords

CIRCUIT OSCILLATIONS; CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE; THERMAL EFFECTS;

ROOM TEMPERATURE; SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 0029206925     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950082     Document Type: Article

References (4)

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2. ALL D., and AHMED, H.: ‘Coulomb blockade in a silicon tunnel junction device’, Appl. Phys. Lett., 1994, 64, pp. 2119-2120
3. TAKAHASHI, Y., ISHIYAMA, T., and TABE, M.: ‘Counter oxidation of superficial Si in single-crystalline Si on SiO2 structure’, Appl. Phys. Lett., 1994, 65
4. KAO, D., MCVITTIE, J.P., NIX, W.D., and SARASWAT, K.C ‘Two-dimensional thermal oxidation of silicon. II. Modelling stress effects in wet oxides’, IEEE Trans., 1988, ED-35, pp. 25-37