SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter

Nuclear Inst. and Methods in Physics Research, B

Volumn 55, Issue 1-4, 1991, Pages 847-851

  Nakashima, S ^a   Izumi, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001469693     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(91)96291-R     Document Type: Article

References (9)

1. Physical characterization of low defect SIMOX materials
2. A 1 mu m CMOS/SOI 64 K SRAM with 10 nA standby current
3. Low defect, high quality SIMOX material for bipolar device applications
4. Temperature measurement technique using Pt diffusion into Au for ion-implanting wafers mounted on a spinning disc