A model for the electrochemical deposition and removal of metallic impurities on si surfaces

IEICE Transactions on Electronics

Volumn E79-C, Issue 3, 1996, Pages 343-362

  Morinaga, Hitoshi ^a   Suyama, Makoto ^a   Nose, Masashi ^a   Verhaverbeke, Steven ^a   Ohml, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Metallic impurities, metal induced pits, redox potential, surfactant, chelating agent

Indexed keywords

AGENTS; CHELATION; DEPOSITION; ELECTROCHEMISTRY; ETCHING; IMPURITIES; MATHEMATICAL MODELS; METALS; OXIDATION; REDOX REACTIONS; SURFACE CLEANING; ULSI CIRCUITS;

CHELATING AGENT; ELECTROCHEMICAL DEPOSITION; METALLIC IMPURITIES; REDOX POTENTIALS;

SILICON WAFERS;

EID: 0030105797     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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