A method of quantitative contamination with metallic impurities of the surface of a silicon wafer

Japanese Journal of Applied Physics

Volumn 27, Issue 12A, 1988, Pages L2361-L2363

  Hourai, Masataka ^a   Naridomi, Toshio ^a   Oka, Yasunori ^a   Murakami, Katsumi ^a   Sumita, Shigeo ^a   Fujino, Nobukatsu ^a   Shiraiwa, Toshio ^b  

^a Kyushu Electronic Metal Co Ltd ^*  (Japan)

^b Osaka Titanium Co Ltd ^*  (Japan)

Author keywords

Gettering; Metallic contamination; Metallic impurity; Recombination lifetime; Silicon wafer; Spin coater

Indexed keywords

METALS AND ALLOYS; SURFACES--CONTAMINATION;

RECOMBINATION LIFETIME; SILICON WAFERS;

SEMICONDUCTING SILICON;

EID: 0024126646     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.L2361     Document Type: Article

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