Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 79-83

  Van Hove, J M ^a   Chow, P P ^a   Wowchak, A M ^a   Klaassen, J J ^a   Rosamond, M F ^a   Croswell, D R ^a  

^a SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NITRIDES; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE MEASUREMENT;

RADIO FREQUENCY ATOMIC NITROGEN PLASMAS;

SEMICONDUCTING FILMS;

EID: 0031143373     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00869-5     Document Type: Article

References (11)

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